Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications
نویسندگان
چکیده
Far infrared ~FIR! absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20–200 mm and compared with the calculated results. Both Be ~in the range 3310– 2.6310 cm! and C (1.8310– 4.7310 cm)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. © 2001 American Institute of Physics. @DOI: 10.1063/1.1347002#
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